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Power Density Reimagined: Injoinic Unveils IP2075_36D with Built-in 700V GaN FET

Joshua
6 monthsago

Injoinic is pushing the boundaries of miniaturized power with the IP2075_36D, a flyback controller that integrates a 700V GaN FET directly into its DFN18L silicon. By merging high-voltage startup and X-cap discharge into a single package, Injoinic has slashed the primary-side component count, making it the go-to choice for engineers aiming for maximum power in the smallest possible form factor.

Power Density Reimagined: Injoinic Unveils IP2075_36D with Built-in 700V GaN FET-3cgo

Efficiency is managed through a smart multi-mode system. Whether it’s running in QR, PFM, or CCM, it adjusts in real-time to keep energy waste at a minimum. With a no-load current of just 310μA, it achieves "Zero Standby Power" status, effortlessly clearing the world’s toughest CoC V5 and DoE VI efficiency hurdles for next-gen adapters.

On the technical front, Frequency Jittering is built-in to keep EMI noise low, simplifying the path to regulatory compliance. The chip is also a fortress of safety, featuring a full array of protections from input/output over-voltage to configurable thermal shutdowns. This ensures that even at the high frequencies required for GaN, the power supply remains rock-solid and reliable.

From standard phone chargers to 140W laptop "bricks," the IP2075_36D is highly versatile. When combined with a Boost PFC stage, it becomes a powerhouse for high-wattage mobile charging. For developers, this full-stack Injoinic solution represents a streamlined, low-barrier entry into the competitive world of high-power GaN fast charging.

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Joshua

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